Samsung has introduced a number of technological innovations across the globe, including the world's first 512GB HKMG RAM module.
The 512GB DDR5 memory module is made using High-K Metal Gate process technology, and HKMG technology is used to make the chip as small as possible. The smaller the size of the device, the smaller the size of the device and the amount of energy required to do so. They note that the power usage of this RAM has been reduced by about 13%.
Samsung says the new memory module is specifically designed for supercomputers, and is particularly suitable for compute - hungry, high - bandwidth workloads such as Artificial Intelligence, Machine Learning and data analytics applications.
Samsung claims that the new RAM module will have twice the speed of the old DDR4 RAM, or about 7,200Mbps, and that the massive 512GB memory module will feature 8 layers of DDR5 16GB RAM chips.
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